Перегляд за автором "Diouri, J."

Сортувати за: Порядок: Результатів:

  • Taqi, A.; Diouri, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum ...
  • Taqi, A.; Diouri, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in ...
  • El Haddad, A.; Diouri, J.; Taqi, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is ...
  • Katih, M.; Diouri, J.; El Haddad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation ...